Description: SiC Power Module Design : Performance, Robustness and Reliability, Hardcover by Castellazzi, Alberto (EDT); Irace, Andrea (EDT), ISBN 1785619071, ISBN-13 9781785619076, Brand New, Free shipping in the US High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. Th is a valuable reference for researchers and experts in academia and industry.
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End Time: 2025-01-21T23:43:23.000Z
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Book Title: SiC Power Module Design : Performance, Robustness and Reliability
Number of Pages: 360 Pages
Publication Name: sic Power Module Design : Performance, Robustness and Reliability
Language: English
Publisher: Institution of Engineering & Technology
Publication Year: 2022
Subject: Power Resources / Electrical, Physics / General
Type: Textbook
Item Length: 9.2 in
Author: Andrea Irace
Subject Area: Technology & Engineering, Science
Series: Energy Engineering Ser.
Item Width: 6.1 in
Format: Hardcover
